Integrated Device Technology, Inc. IDT8M824S45C | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT8M824S45C

生命周期状态
Discontinued
说明
SRAM Module, 128KX8, 45ns, CMOS, CDMA32
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-CDMA-T32
Memory Width
8
Organization
128KX8
Package Code
DIP
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory Density
1048576 bit
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Terminal Pitch
2.54 mm
Access Time-Max
45 ns
Number of Words
131072 words
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
TTL COMPATIBLE INPUTS/OUTPUTS
Supply Current-Max
265 mA
Number of Functions
1
Number of Terminals
32
Standby Current-Max
0.08 Amp
Standby Voltage-Min
4.5 V
Number of Words Code
128K
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Package Equivalence Code
DIP32,.6
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V