Integrated Device Technology, Inc. IDT8M612S35C | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT8M612S35C

生命周期状态
Discontinued
说明
SRAM Module, 32KX16, 35ns, CMOS, CDMA40
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-CDMA-T40
Memory Width
16
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
TTL COMPATIBLE INPUTS/OUTPUTS
Memory Organization
32KX16
Number of Functions
1
Number of Terminals
40
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
35
Number of Words Code
32K
Memory Density (bits)
524288
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
32768
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
400
Package Equivalence Code
DIP40,.6
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0