Integrated Device Technology, Inc. IDT7MPV6356S10M | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT7MPV6356S10M

生命周期状态
Discontinued
REACH
REACH compliant
说明
Cache SRAM Module, 512KX8, 10ns, CMOS
类别
Semiconductors Memory ICs SRAMs CACHE SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
R-XSMA-N178
Memory Width
8
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
J-STD-609 Code
e0
Memory IC Type
CACHE SRAM MODULE
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
SINGLE
Memory Organization
512KX8
Number of Functions
1
Number of Terminals
178
Access Time-Max (ns)
10
Number of Words Code
512K
Memory Density (bits)
4194304
Package Body Material
UNSPECIFIED
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3.14
Supply Voltage-Nom (V)
3.3
Number of Words (words)
524288
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0