Integrated Device Technology, Inc. IDT7MP6152S33M | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT7MP6152S33M

生命周期状态
Discontinued
说明
Cache SRAM Module, 256KX32, 30ns, CMOS
类别
Semiconductors Memory ICs SRAMs CACHE SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-XDMA-N112
Memory Width
32
Package Code
DIMM
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
CACHE SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
DIRECT MAPPING
Memory Organization
256KX32
Number of Functions
1
Number of Terminals
112
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
30
Number of Words Code
256K
Memory Density (bits)
8388608
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.25
Supply Voltage-Min (V)
4.75
Supply Voltage-Nom (V)
5
Number of Words (words)
262144
Standby Current-Max (A)
0.205
Standby Voltage-Min (V)
4.75
Supply Current-Max (mA)
1140
Package Equivalence Code
DIMM112
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0