Integrated Device Technology, Inc. IDT7MP6118S33M | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT7MP6118S33M

生命周期状态
Discontinued
说明
Cache SRAM Module, 128KX9, 22ns, CMOS
类别
Semiconductors Memory ICs SRAMs CACHE SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-XSMA-N128
Memory Width
9
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
CACHE SRAM MODULE
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
SINGLE
Additional Feature
BURST COUNTER; SELF TIMED WRITE CYCLE
Memory Organization
128KX9
Number of Functions
1
Number of Terminals
128
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
22
Number of Words Code
128K
Memory Density (bits)
1179648
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.25
Supply Voltage-Min (V)
4.75
Supply Voltage-Nom (V)
5
Number of Words (words)
131072
Standby Voltage-Min (V)
4.75
Supply Current-Max (mA)
1250
Package Equivalence Code
DIMM128
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0