Integrated Device Technology, Inc. IDT7MB6136S55K | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT7MB6136S55K

生命周期状态
Discontinued
说明
Multi-Port SRAM Module, 128KX18, 55ns, CMOS
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-XQMA-P104
Memory Width
18
Package Code
QIP
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Additional Feature
TTL COMPATIBLE INPUTS/OUTPUTS
Memory Organization
128KX18
Number of Functions
1
Number of Terminals
104
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
55
Number of Words Code
128K
Memory Density (bits)
2359296
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
131072
Standby Current-Max (A)
0.17
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
520
Package Equivalence Code
QI104,2.0/2.2,100
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0