Integrated Device Technology, Inc. IDT7M4084L100N | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT7M4084L100N

生命周期状态
Discontinued
说明
SRAM Module, 2MX8, 100ns, CMOS, CDMA36
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-CDMA-T36
Memory Width
8
Package Code
DIP
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
2MX8
Number of Functions
1
Number of Terminals
36
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
100
Number of Words Code
2M
Memory Density (bits)
16777216
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
2097152
Standby Current-Max (A)
0.00025
Standby Voltage-Min (V)
2
Supply Current-Max (mA)
110
Package Equivalence Code
DIP36,.6
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0