Integrated Device Technology, Inc. IDT7M1003S80CB | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT7M1003S80CB

生命周期状态
Discontinued
说明
Multi-Port SRAM Module, 64KX8, 80ns, CMOS
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM MODULE

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-XDMA-T64
Memory Width
8
Package Code
DIP
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Additional Feature
SEMAPHORE
Memory Organization
64KX8
Number of Functions
1
Number of Terminals
64
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
80
Number of Words Code
64K
Memory Density (bits)
524288
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
65536
Standby Current-Max (A)
0.125
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
790
Package Equivalence Code
DIP64,.6
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883 Class B (Modified)