Integrated Device Technology, Inc. IDT7M1002S35GB | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT7M1002S35GB

生命周期状态
Discontinued
说明
Multi-Port SRAM Module, 16KX32, 35ns, CMOS
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM MODULE

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-XPMA-P121
Memory Width
32
Package Code
PGA
Output Enable
YES
Package Shape
SQUARE
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
PERPENDICULAR
Additional Feature
INTERRUPT FLAG; ARBITER; SEMAPHORE
Memory Organization
16KX32
Number of Functions
1
Number of Terminals
121
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
35
Number of Words Code
16K
Memory Density (bits)
524288
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
16384
Standby Current-Max (A)
0.12
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
1600
Package Equivalence Code
PGA121,13X13
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
38535Q/M;38534H;883B