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IDT7252L80CB

Integrated Device Technology, Inc.

Integrated Device Technology, Inc. IDT7252L80CB
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.71
  • SB Code
    8542.32.00.70
  • Cycle Time
    100 ns
  • Technology
    MOS
  • JESD-30 Code
    R-CDIP-T48
  • Memory Width
    9
  • Organization
    2KX9
  • Package Code
    DIP
  • JESD-609 Code
    e0
  • Output Enable
    NO
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Memory Density
    18432 bit
  • Memory IC Type
    BI-DIRECTIONAL FIFO
  • Operating Mode
    ASYNCHRONOUS
  • Terminal Pitch
    2.54 mm
  • Access Time-Max
    80 ns
  • Number of Words
    2048 words
  • Parallel/Serial
    PARALLEL
  • Screening Level
    38535Q/M;38534H;883B
  • Terminal Finish
    TIN LEAD
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Additional Feature
    PARITY GENERATOR/CHECKER; BYPASS XCVR; PORTA/PORTB:1024 X 18/2048 X 9
  • Supply Current-Max
    170 mA
  • Number of Functions
    1
  • Number of Terminals
    48
  • Standby Current-Max
    0.004 Amp
  • Number of Words Code
    2K
  • Qualification Status
    Not Qualified
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Output Characteristics
    3-STATE
  • Package Equivalence Code
    DIP48,.6
  • Operating Temperature-Max
    125 Cel
  • Operating Temperature-Min
    -55 Cel
  • Supply Voltage-Max (Vsup)
    5.5 V
  • Supply Voltage-Min (Vsup)
    4.5 V
  • Supply Voltage-Nom (Vsup)
    5 V

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IDT7252L80CB