Integrated Device Technology, Inc. IDT70P3337S233RMI | 搜芯易Sourcengine

Integrated Device Technology, Inc. IDT70P3337S233RMI

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
QDR SRAM, 512KX18, 0.45ns, CMOS, PBGA576
类别
Semiconductors Memory ICs SRAMs QDR SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
25
Length (mm)
25
JESD-30 Code
S-PBGA-B576
Memory Width
18
Package Code
BGA
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
QDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
512KX18
Number of Functions
1
Number of Terminals
576
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.45
Number of Words Code
512K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.55
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
524288
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
40