INTEGRA TECHNOLOGIES INC IDM30512CW50 | 搜芯易Sourcengine

INTEGRA TECHNOLOGIES INC IDM30512CW50

生命周期状态
Contact Mfr
说明
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XDFM-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
15 pF
DS Breakdown Voltage-Min
70 V
Operating Temperature-Max
200 Cel
Operating Temperature-Min
-55 Cel
Transistor Element Material
SILICON