Integrated Silicon Solution Inc. IC43R32400-5BG | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IC43R32400-5BG

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR1 DRAM, 4MX32, 0.7ns, CMOS, PBGA144
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PBGA-B144
Memory Width
32
Package Code
FBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR1 DRAM
Refresh Cycles
4096
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
4MX32
Number of Terminals
144
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.7
Number of Words Code
4M
Memory Density (bits)
134217728
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
2.5
Number of Words (words)
4194304
Sequential Burst Length
2,4,8,FP
Standby Current-Max (A)
0.04
Supply Current-Max (mA)
550
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA144,12X12,32
Clock Frequency-Max (MHz)
200
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
10