INFINEON TECHNOLOGIES AG IAUC60N04S6N031H | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IAUC60N04S6N031H

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 60A I(D), 40V, 0.0036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F8
Configuration
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN SOURCE
Terminal Finish
TIN
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
60
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
39
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
100
Pulsed Drain Current-Max (IDM) (A)
311
Drain-source On Resistance-Max (ohm)
0.0036
Screening Level / Reference Standard
AEC-Q101