INFINEON TECHNOLOGIES AG IAUC45N04S6N070H | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IAUC45N04S6N070H

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 45A I(D), 40V, 0.009ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
41
Drain Current-Max (ID) (A)
45
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
21
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
38
Pulsed Drain Current-Max (IDM) (A)
119
Drain-source On Resistance-Max (ohm)
0.009