SK Hynix HYMD564G726CFP8N-J | 搜芯易Sourcengine

SK Hynix HYMD564G726CFP8N-J

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
DDR DRAM Module, 64MX8, 0.7ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Access Mode
SINGLE BANK PAGE BURST
JESD-30 Code
R-XDMA-N184
Memory Width
8
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
J-STD-609 Code
e1
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX8
Number of Functions
1
Number of Terminals
184
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
0.7
Number of Words Code
64M
Memory Density (bits)
536870912
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
67108864
Standby Current-Max (A)
0.54
Supply Current-Max (mA)
3800
Package Equivalence Code
DIMM184
Clock Frequency-Max (MHz)
167
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0