SK Hynix HYMD512M646ALFS8-J | 搜芯易Sourcengine

SK Hynix HYMD512M646ALFS8-J

生命周期状态
Discontinued
REACH
REACH compliant
说明
DDR1 DRAM Module, 128MX64, CMOS
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
3.8
Access Mode
DUAL BANK PAGE BURST
Length (mm)
67.6
JESD-30 Code
R-XDMA-N200
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR1 DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
ZIG-ZAG
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Memory Organization
128MX64
Number of Functions
1
Number of Terminals
200
Number of Words Code
128M
Memory Density (bits)
8589934592
Package Body Material
UNSPECIFIED
Seated Height-Max (mm)
31.75
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
134217728
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.16
Supply Current-Max (mA)
3200
Interleaved Burst Length
2,4,8
Clock Frequency-Max (MHz)
166
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0