HYE18M512160BF-7.5
INFINEON TECHNOLOGIES AG
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明DDR1 DRAM, 32MX16, 6.5ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR1 DRAM
- Refresh Cycles8192
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Memory Organization32MX16
- Number of Terminals60
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)6.5
- Number of Words Code32M
- Memory Density (bits)536870912
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)1.8
- Number of Words (words)33554432
- Sequential Burst Length2,4,8,16
- Standby Current-Max (A)0.0007
- Supply Current-Max (mA)75
- Interleaved Burst Length2,4,8,16
- Package Equivalence CodeBGA60,9X10,32
- Clock Frequency-Max (MHz)133
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-25
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HYE18M512160BF-7.5