HYB514175BJ-50
Siemens AG
- 生命周期状态Transferred
- 说明EDO DRAM, 256KX16, 50ns, CMOS, PDSO40
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Access ModeFAST PAGE WITH EDO
- JESD-30 CodeR-PDSO-J40
- Memory Width16
- Package CodeSOJ
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles512
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Memory Organization256KX16
- Number of Functions1
- Number of Terminals40
- Access Time-Max (ns)50
- Number of Words Code256K
- Memory Density (bits)4194304
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)262144
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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HYB514175BJ-50