Siemens AG HYB511000B-80 | 搜芯易Sourcengine

Siemens AG HYB511000B-80

生命周期状态
Discontinued
说明
Fast Page DRAM, 1MX1, 80ns, CMOS, PDIP18
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
Access Mode
FAST PAGE
JESD-30 Code
R-PDIP-T18
Memory Width
1
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
FAST PAGE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
512
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE
Memory Organization
1MX1
Number of Functions
1
Number of Terminals
18
Access Time-Max (ns)
80
Number of Words Code
1M
Memory Density (bits)
1048576
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
1048576
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0