Siemens AG HYB41256-15 | 搜芯易Sourcengine

Siemens AG HYB41256-15

生命周期状态
Discontinued
说明
Page Mode DRAM, 256KX1, 150ns, CMOS, PDIP16
类别
Semiconductors Memory ICs DRAMs PAGE MODE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
Access Mode
PAGE
JESD-30 Code
R-PDIP-T16
Memory Width
1
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
PAGE MODE DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/HIDDEN REFRESH
Memory Organization
256KX1
Number of Functions
1
Number of Terminals
16
Access Time-Max (ns)
150
Number of Words Code
256K
Memory Density (bits)
262144
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
262144
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0