Siemens AG HYB39S16400T-10 | 搜芯易Sourcengine

Siemens AG HYB39S16400T-10

生命周期状态
Transferred
说明
Synchronous DRAM, 4MX4, 8ns, MOS, PDSO44
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
MOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-PDSO-G44
Memory Width
4
Package Code
SOP
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Memory Organization
4MX4
Number of Functions
1
Number of Terminals
44
Access Time-Max (ns)
8
Number of Words Code
4M
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
4194304
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0