HYB3164805J-50
Siemens AG
- 生命周期状态Discontinued
- 说明EDO DRAM, 8MX8, 50ns, CMOS, PDSO34
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Access ModeFAST PAGE WITH EDO
- JESD-30 CodeR-PDSO-J34
- Memory Width8
- Package CodeSOJ
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
- Memory Organization8MX8
- Number of Functions1
- Number of Terminals34
- Access Time-Max (ns)50
- Number of Words Code8M
- Memory Density (bits)67108864
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)8388608
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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HYB3164805J-50