Siemens AG HYB3117405BJ-60 | 搜芯易Sourcengine

Siemens AG HYB3117405BJ-60

生命周期状态
Transferred
说明
EDO DRAM, 4MX4, 60ns, CMOS, PDSO24
类别
Semiconductors Memory ICs DRAMs EDO DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
Access Mode
FAST PAGE WITH EDO
JESD-30 Code
R-PDSO-J24
Memory Width
4
Package Code
SOJ
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory IC Type
EDO DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
2048
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Memory Organization
4MX4
Number of Functions
1
Number of Terminals
24
Access Time-Max (ns)
60
Number of Words Code
4M
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
4194304
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0