HYB25R288180C-653
INFINEON TECHNOLOGIES AG
- 生命周期状态Discontinued
- 说明Rambus DRAM, 16MX18, 53ns, CMOS, PBGA62
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- Width10.5 mm
- Length11 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-PBGA-B62
- Memory Width18
- Organization16MX18
- Package CodeTBGA
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density301989888 bit
- Memory IC TypeRAMBUS DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max53 ns
- Number of Ports1
- Number of Words16777216 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.05 mm
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Number of Functions1
- Number of Terminals62
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA66,10X13,32
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)600 MHz
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