INFINEON TECHNOLOGIES AG HYB25D512160CT-5 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG HYB25D512160CT-5

生命周期状态
Transferred
说明
DDR1 DRAM, 32MX16, 0.5ns, CMOS, PDSO66
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
10.16
Access Mode
FOUR BANK PAGE BURST
Length (mm)
22.22
JESD-30 Code
R-PDSO-G66
Memory Width
16
Package Code
TSSOP
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Memory Organization
32MX16
Number of Functions
1
Number of Terminals
66
Terminal Pitch (mm)
0.65
Access Time-Max (ns)
0.5
Number of Words Code
32M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.5
Supply Voltage-Nom (V)
2.6
Number of Words (words)
33554432
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0