HYB25D1G800AE-5
INFINEON TECHNOLOGIES AG
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR1 DRAM, 128MX8, 0.7ns, CMOS, PDSO66
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- Width10.16 mm
- Length22.22 mm
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PDSO-G66
- Memory Width8
- Organization128MX8
- Package CodeTSOP2
- Self RefreshYES
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density1073741824 bit
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.65 mm
- Access Time-Max0.7 ns
- Number of Ports1
- Number of Words134217728 words
- Terminal FinishMATTE TIN
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals66
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.5 V
- Supply Voltage-Nom (Vsup)2.6 V
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