QIMONDA AG HYB25D128400CCL-6 | 搜芯易Sourcengine

QIMONDA AG HYB25D128400CCL-6

生命周期状态
Discontinued
说明
DDR1 DRAM, 32MX4, 0.5ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B60
Memory Width
4
Organization
32MX4
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
134217728 bit
Memory IC Type
DDR1 DRAM
Refresh Cycles
4096
Terminal Pitch
0.8 mm
Access Time-Max
0.5 ns
Number of Words
33554432 words
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Supply Current-Max
215 mA
Number of Terminals
60
Standby Current-Max
0.0045 Amp
Number of Words Code
32M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA60,8X12,40/32
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
166 MHz