HYB25D128323C-5
INFINEON TECHNOLOGIES AG
- 生命周期状态Discontinued
- 说明DDR1 DRAM, 4MX32, 0.7ns, CMOS, PBGA128
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width11 mm
- Length11 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeS-PBGA-B128
- Memory Width32
- Organization4MX32
- Package CodeLFBGA
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeSQUARE
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density134217728 bit
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch0.8 mm
- Access Time-Max0.7 ns
- Number of Ports1
- Number of Words4194304 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.5 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max300 mA
- Number of Functions1
- Number of Terminals128
- Standby Current-Max0.05 Amp
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeBGA144,12X12,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.38 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)200 MHz
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HYB25D128323C-5