INFINEON TECHNOLOGIES AG HYB25D128160CT-5 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG HYB25D128160CT-5

生命周期状态
Transferred
REACH
REACH compliant
说明
DDR1 DRAM, 8MX16, 0.5ns, CMOS, PDSO66
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
10.16
Access Mode
FOUR BANK PAGE BURST
Length (mm)
22.22
JESD-30 Code
R-PDSO-G66
Memory Width
16
Package Code
TSOP2
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Memory Organization
8MX16
Number of Functions
1
Number of Terminals
66
Terminal Pitch (mm)
0.65
Access Time-Max (ns)
0.5
Number of Words Code
8M
Memory Density (bits)
134217728
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.5
Supply Voltage-Nom (V)
2.6
Number of Words (words)
8388608
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.005
Supply Current-Max (mA)
250
Interleaved Burst Length
2,4,8
Package Equivalence Code
TSSOP66,.46
Clock Frequency-Max (MHz)
200
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0