HYB18TC256160AF-3S
INFINEON TECHNOLOGIES AG
- 生命周期状态Transferred
- 说明DDR2 DRAM, 16MX16, 0.45ns, CMOS, PBGA84
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)10
- Access ModeFOUR BANK PAGE BURST
- Length (mm)12.5
- JESD-30 CodeR-PBGA-B84
- Memory Width16
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization16MX16
- Number of Functions1
- Number of Terminals84
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)0.45
- Number of Words Code16M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)16777216
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HYB18TC256160AF-3S