HEXAWAVE INC HWL27YRA | 搜芯易Sourcengine

HEXAWAVE INC HWL27YRA

生命周期状态
Contact Mfr
说明
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.46 A
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
15 V
Operating Temperature-Max
175 Cel
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
3.5 W