HUM2010B
Microsemi Corporation
- 生命周期状态Transferred
- 说明Pin Diode, 1000V V(BR), Silicon
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypePIN DIODE
- TechnologyPOSITIVE-INTRINSIC-NEGATIVE
- ApplicationSWITCHING
- JESD-30 CodeO-XALF-W2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountNO
- Terminal FormWIRE
- J-STD-609 Codee0
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionAXIAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Diode Element MaterialSILICON
- Reverse Test Voltage (V)100
- Breakdown Voltage-Min (V)1000
- Power Dissipation-Max (W)13
- Diode Capacitance-Max (pF)4
- Diode Capacitance-Nom (pF)3.4
- Diode Res Test Current (mA)500
- Diode Res Test Frequency (MHz)4
- Operating Temperature-Max (Cel)150
- Diode Forward Resistance-Max (ohm)0.2
- Minority Carrier Lifetime-Nom (us)30
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HUM2010B