HUFA75639S3ST-F085A
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET N-CH 100V 56A D2PAK
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- JESD-609 Codee3
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Terminal FinishTIN
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)56 A
- Operating Temperature-Max175 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)200 W
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)30
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HUFA75639S3ST-F085A