HUF76407DK8
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 3.8A I(D), 60V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)3.8
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.09
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HUF76407DK8