TT ELECTRONICS PLC HUF75637SMD05 | 搜芯易Sourcengine

TT ELECTRONICS PLC HUF75637SMD05

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-276AA
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
44
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
175
Pulsed Drain Current-Max (IDM) (A)
160
Drain-source On Resistance-Max (ohm)
0.03