HARRIS SEMICONDUCTOR HUF75329D3ST | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HUF75329D3ST

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 0.026ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.026 ohm