HARRIS SEMICONDUCTOR HUF75321S3S | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HUF75321S3S

生命周期状态
EOL
说明
MOSFET N-CH 55V 35A D2PAK
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
31 A
Transistor Application
SWITCHING
Operating Temperature-Max
175 Cel
Power Dissipation-Max (Abs)
70 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.032 ohm