Hitachi, Ltd. HSU277 | 搜芯易Sourcengine

Hitachi, Ltd. HSU277

生命周期状态
Transferred
说明
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
Technology
PLANAR DOPED BARRIER
JESD-30 Code
R-PDSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Forward Voltage-Max (V)
1
Power Dissipation-Max (W)
0.15
Diode Capacitance-Max (pF)
1.2
Rep Pk Reverse Voltage-Max (V)
35
Operating Temperature-Max (Cel)
60