Renesas Technology Corp. HSG2003TR | 搜芯易Sourcengine

Renesas Technology Corp. HSG2003TR

生命周期状态
Transferred
说明
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, C Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XBCC-N7
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
Case Connection
EMITTER
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
DC Current Gain-Min (hFE)
170
Power Dissipation-Max (W)
0.5
Transistor Element Material
SILICON GERMANIUM
Peak Reflow Temperature (Cel)
240
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
5
Collector-base Capacitance-Max (pF)
0.5
Transition Frequency-Nom (fT) (MHz)
32500
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED