Renesas Technology Corp. HSG2002TB-E | 搜芯易Sourcengine

Renesas Technology Corp. HSG2002TB-E

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Power Bipolar Transistor, 1-Element, C Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
S-PQSO-N8
Configuration
SINGLE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
Case Connection
EMITTER
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
Transistor Element Material
SILICON GERMANIUM
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.5
Collector-emitter Voltage-Max (V)
5
Collector-base Capacitance-Max (pF)
1
Transition Frequency-Nom (fT) (MHz)
28500
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED