Agilent Technologies, Inc. HSCH-6512 | 搜芯易Sourcengine

Agilent Technologies, Inc. HSCH-6512

生命周期状态
Transferred
说明
Mixer Diode, Medium Barrier, L Band to KU Band, 400ohm Z(V) Max, 6.2dB Noise Figure, Silicon
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
Technology
SCHOTTKY
JESD-30 Code
O-CRDB-F3
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
Frequency Band
L BAND TO KU BAND
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
2
Impedance-Max (ohm)
400
Impedance-Min (ohm)
200
Number of Terminals
3
Noise Figure-Max (dB)
6.2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Diode Element Material
SILICON
Type of Schottky Barrier
MEDIUM BARRIER
Diode Capacitance-Max (pF)
0.27
CW RF Incident Power-Max (W)
0.3
Operating Frequency-Max (GHz)
18
Operating Frequency-Min (GHz)
1
Operating Temperature-Max (Cel)
175
Pulse RF Incident Power-Max (W)
1