Toshiba Corporation HN3G01JBL | 搜芯易Sourcengine

Toshiba Corporation HN3G01JBL

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G5
Configuration
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
3 pF
Operating Temperature-Max
125 Cel
Transistor Element Material
SILICON