Toshiba Corporation HN1L02FU | 搜芯易Sourcengine

Toshiba Corporation HN1L02FU

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
0.05 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Drain-source On Resistance-Max
40 ohm