Toshiba Corporation HN1C01F-Y(TE85LF) | 搜芯易Sourcengine

Toshiba Corporation HN1C01F-Y(TE85LF)

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
TRANS 2NPN 50V 0.15A SM6
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.25
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
120
Power Dissipation-Max (W)
0.3
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.15
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
50
Power Dissipation Ambient-Max (W)
0.3
Collector-base Capacitance-Max (pF)
3.5
Transition Frequency-Nom (fT) (MHz)
80
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED