HMT125S6AFP8C-G7
SK Hynix
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR3 DRAM Module, 256MX8, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- Width (mm)3.8
- Access ModeDUAL BANK PAGE BURST
- Length (mm)67.6
- JESD-30 CodeR-XDMA-N240
- Memory Width8
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeDDR3 DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
- Memory Organization256MX8
- Number of Functions1
- Number of Terminals203
- Terminal Pitch (mm)0.6
- Number of Words Code256M
- Memory Density (bits)2147483648
- Package Body MaterialUNSPECIFIED
- Seated Height-Max (mm)30
- Supply Voltage-Max (V)1.575
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)268435456
- Standby Current-Max (A)0.16
- Supply Current-Max (mA)2480
- Package Equivalence CodeDIMM204,24
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)20
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HMT125S6AFP8C-G7