Hitachi, Ltd. HM5164165FLJ-5 | 搜芯易Sourcengine

Hitachi, Ltd. HM5164165FLJ-5

生命周期状态
Transferred
说明
EDO DRAM, 4MX16, 50ns, CMOS, PDSO50
类别
Semiconductors Memory ICs DRAMs EDO DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
10.16
Access Mode
EDO PAGE
Length (mm)
20.95
JESD-30 Code
R-PDSO-J50
Memory Width
16
Package Code
SOJ
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e0
Memory IC Type
EDO DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
Memory Organization
4MX16
Number of Functions
1
Number of Terminals
50
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
50
Number of Words Code
4M
Memory Density (bits)
67108864
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
3.76
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
4194304
Supply Current-Max (mA)
120
Package Equivalence Code
SOJ50,.44,32
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0