HM511666ZP-10
Hitachi, Ltd.
- 生命周期状态Discontinued
- 说明Static Column DRAM, 64KX16, 100ns, CMOS, PZIP40
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width2.85 mm
- Length50.82 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeSTATIC COLUMN
- JESD-30 CodeR-PZIP-T40
- Memory Width16
- Organization64KX16
- Package CodeZIP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density1048576 bit
- Memory IC TypeSTATIC COLUMN DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles256
- Terminal Pitch1.27 mm
- Access Time-Max100 ns
- Number of Ports1
- Number of Words65536 words
- Terminal FinishTIN LEAD
- Seated Height-Max12.07 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionZIG-ZAG
- Additional FeatureRAS ONLY/CAS BEFORE RAS REFRESH
- Supply Current-Max90 mA
- Number of Functions1
- Number of Terminals40
- Standby Current-Max0.001 Amp
- Number of Words Code64K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeZIP40,.1
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)5.5 V
- Supply Voltage-Min (Vsup)4.5 V
- Supply Voltage-Nom (Vsup)5 V
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HM511666ZP-10