Hitachi, Ltd. HL8311E | 搜芯易Sourcengine

Hitachi, Ltd. HL8311E

生命周期状态
Transferred
说明
Laser Diode, 830nm
类别
Semiconductors Optoelectronics Laser Diodes LASER DIODE

Shape
ROUND
Size (mm)
3
Configuration
SINGLE WITH BUILT-IN PHOTO DIODE
J-STD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
Mounting Feature
THROUGH HOLE MOUNT
Additional Feature
HIGH RELIABILITY
Number of Functions
1
Peak Wavelength (nm)
830
Output Power-Nom (mW)
15
Semiconductor Material
GaAlAs
Forward Current-Max (A)
0.09
Optoelectronic Device Type
LASER DIODE
Threshold Current-Max (mA)
90
Operating Temperature-Max (Cel)
60
Operating Temperature-Min (Cel)
-10