USHIO OPTO SEMICONDUCTORS, INC. HL65051DG | 搜芯易Sourcengine

USHIO OPTO SEMICONDUCTORS, INC. HL65051DG

生命周期状态
Active
RoHS
符合RoHS标准
说明
Laser Diode, 660nm
类别
Semiconductors Optoelectronics Laser Diodes LASER DIODE

Shape
ROUND
Size (mm)
1.6
Configuration
SINGLE WITH BUILT-IN PHOTO DIODE
Mounting Feature
RADIAL MOUNT
Number of Functions
1
Peak Wavelength (nm)
660
Output Power-Nom (mW)
130
Semiconductor Material
AlGaInP
Forward Current-Max (A)
0.21
Forward Voltage-Max (V)
3.3
Optoelectronic Device Type
LASER DIODE
Threshold Current-Max (mA)
75
Operating Temperature-Max (Cel)
60
Operating Temperature-Min (Cel)
-10